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FQPF16N25C

FQPF16N25C is a Power Field-Effect Transistor with a maximum drain current of 15

FQPF16N25C General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 15.6A, 250V, RDS(on) = 270mΩ(Max.) @VGS = 10 V, ID = 7.8A
  • Low gate charge ( Typ. 41nC)
  • Low Crss ( Typ. 68pF)
  • 100% avalanche tested

Application

  • LED TV

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 250 V
Id - Continuous Drain Current 15.6 A Rds On - Drain-Source Resistance 270 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 41 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 43 W
Channel Mode Enhancement Tradename QFET
Series FQPF16N25C Configuration Single
Fall Time 105 ns Forward Transconductance - Min 10.5 S
Height 16.07 mm Length 10.36 mm
Product Type MOSFET Rise Time 130 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 135 ns Typical Turn-On Delay Time 15 ns
Width 4.9 mm Part # Aliases FQPF16N25C_NL
Unit Weight 0.068784 oz

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Availability: 4553 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $1.296 $1.30
10+ $1.117 $11.17
50+ $1.020 $51.00
100+ $0.909 $90.90
500+ $0.860 $430.00
1000+ $0.837 $837.00

The prices below are for reference only.