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IRF6665TR1PBF

MOSFET 100V N-CH DirectFET for Digital Audio

  • Manufacturer: Infineon Technologies

  • Mfr.Part #: IRF6665TR1PBF

  • Datasheet: IRF6665TR1PBF Datasheet (PDF) pdf-icon

  • Series: HEXFET®

  • FET Type: N-Channel

  • Technology: MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss): 100 V

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

IRF6665TR1PBF General Description

N-Channel 100 V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SH

Key Features

  • Latest MOSFET Silicon technology
  • Key parameters optimized for Class-D audio amplifier applications
  • Low RDS(on) for improved efficiency
  • Low Qg for better THD and improved efficiency
  • Low Qrr for better THD and lower EMI
  • Low package stray inductance for reduced ringing and lower EMI
  • Can deliver up to 100W per channel into 8Ω with no heatsink
  • Dual sided cooling compatible
  • Compatible with existing surface mount technologies
  • RoHS compliant containing no lead or bromide
  • ead-Free (Qualified up to 260°C Reflow)

Specifications

Series HEXFET® FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount

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