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See Technical Specifications

CSD13380F3 +BOM

12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

Manufacturer:

TI
Mfr.Part #:

CSD13380F3
Datasheet:

CSD13380F3 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

CSD13380F3 General Description

This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

Key Features

Low on resistance
Ultra-low Q_g and Q_gd
High operating drain current
Ultra-small footprint
- 0.73 mm × 0.64 mm
Low profile
- 0.36-mm max height
Integrated ESD protection diode
- Rated > 3-kV HBM
- Rated > 2-kV CDM
Lead and halogen free
RoHS compliant

Application

Suitable for Lighting, Switching Regulator and Motor Control

Specifications

Source Content uid	CSD13380F3	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.29.00.95
Date Of Intro	2016-10-31	Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min	12 V	Drain Current-Max (ID)	3.6 A
Drain-source On Resistance-Max	0.092 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	12.5 pF	JESD-30 Code	R-PBGA-B3
JESD-609 Code	e4	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	13.5 A
Surface Mount	YES	Terminal Finish	NICKEL GOLD
Terminal Form	BUTT	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON