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See Technical Specifications

IRF2807

TO-220AB N-Channel MOSFET Transistor

Manufacturer:

Infineon
Mfr.Part #:

IRF2807
Datasheet:

IRF2807 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IRF2807

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IRF2807 General Description

The IRF2807 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high power applications. It is a N-channel MOSFET with a drain-source voltage rating of 75V and a continuous drain current of 82A. The transistor has a low on-resistance of 35mΩ, allowing for efficient power handling and minimal power loss. The IRF2807 is housed in a TO-220 package, making it easy to mount on a heat sink for enhanced thermal management. It also features a fast switching speed, which is essential for high-frequency applications such as switching power supplies and motor control.This MOSFET is commonly used in power electronics applications such as DC-DC converters, motor drives, and other power switching circuits where high current and voltage handling capabilities are required. The IRF2807 is known for its reliability and robustness, making it a popular choice among engineers and designers for power applications.

Key Features

100V, 82A, 2.5mΩ N-Channel Power MOSFET
Low on-state resistance
Fast switching speed
High current capability
Low gate charge
Designed for high power applications such as motor control, inverters, and DC-DC converters

Application

Switch mode power supplies
Motor control applications
DC-DC converters
Battery chargers
Audio amplifiers
Lighting control circuits
Solar inverters
Electronic ballasts
Industrial automation systems
Telecommunication equipment

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	82 A	Rds On - Drain-Source Resistance	13 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	230 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	48 ns	Height	15.65 mm
Length	10 mm	Product Type	MOSFET
Rise Time	64 ns	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	49 ns
Typical Turn-On Delay Time	13 ns	Width	4.4 mm
Unit Weight	0.068784 oz