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See Technical Specifications

BUR52

TO-3 Bipolar Transistors - BJT ROHS

Manufacturer:

Tt Electronics
Mfr.Part #:

BUR52
Datasheet:

BUR52 Datasheet (PDF)
REACH:

Details
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for BUR52

Email: [email protected]

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Tel: +852 95804164

BUR52 General Description

DESCRIPTIONThe BUR52 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.■ SGS-THOMSON PREFERRED SALESTYPE■ NPN TRANSISTOR■ MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVEAPPLICATIONS■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

Specifications

Product Category	Bipolar Transistors - BJT	REACH	Details
Mounting Style	Through Hole	Transistor Polarity	NPN
Configuration	Single	Collector- Emitter Voltage VCEO Max	250 V
Collector- Base Voltage VCBO	350 V	Emitter- Base Voltage VEBO	10 V
Collector-Emitter Saturation Voltage	1.5 V	Maximum DC Collector Current	80 A
Pd - Power Dissipation	350 W	Gain Bandwidth Product fT	16 MHz
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
Continuous Collector Current	60 A	DC Collector/Base Gain hfe Min	20 at 5 A, 4 V
DC Current Gain hFE Max	100 at 5 A, 4 V	Height	9.15 mm
Length	39.12 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	10	Subcategory	Transistors
Technology	Si	Width	26.67 mm