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See Technical Specifications

IRF1010E

TO-220AB Package with Three Pins

Manufacturer:

Infineon
Mfr.Part #:

IRF1010E
Datasheet:

IRF1010E Datasheet (PDF)
Tj max:

175.0 °C
Mounting:

THT
VDS max:

60.0 V
Polarity:

N
EDA/CAD Models:

Request Free CAD Models for IRF1010E

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IRF1010E General Description

The IRF1010E is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high power applications. It is capable of handling large currents and voltage levels, making it suitable for use in various electronic circuits and power supplies.The IRF1010E features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 84A, allowing for efficient power delivery. It has a low on-resistance (RDS(on)) of 12.5mΩ, reducing power losses and improving overall performance.This MOSFET is housed in a TO-220AB package, which provides good thermal conductivity and easy mounting on a heatsink for effective heat dissipation. The IRF1010E is also equipped with a fast switching speed and low gate charge, enabling rapid response times and high efficiency in switching applications.Furthermore, the IRF1010E is RoHS compliant, meeting environmental standards for lead-free electronics.

Key Features

Advanced MOSFET technology
Low on-resistance
Fully avalanche rated
Fast switching speed
Low gate charge
Industry-standard TO-220 package
Enhanced ruggedness
Designed for high-power applications
Available in tape and reel packaging

Application

Automotive industry for power management applications
Industrial control systems for motor controls and smart grid applications
Telecommunications for signal amplification and power distribution
Consumer electronics for battery charging and power switching
Aerospace and defense for radar systems and communication equipment
Medical devices for power supply and control circuits
Renewable energy systems for inverters and charge controllers

Specifications

Tj max	175.0 °C	Mounting	THT
VDS max	60.0 V	Polarity	N
Ptot max	170.0 W	RthJC max	0.9 K/W
VGS max	20.0 V	RDS (on) max	12.0 mΩ
VGS(th) max	4.0 V	VGS(th) min	2.0 V
ID max	84.0 A	Operating Temperature max	175.0 °C
Operating Temperature min	-55.0 °C