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FQPF5N60C

N-Channel 600 V 4.5A (Tc) 33W (Tc) Through Hole TO-220F-3

email Email: [email protected]
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tel Tel: +852 95804164

FQPF5N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

fqpf5n60c

Key Features

  • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10V
  • Low gate charge (typical 15 nC)
  • Low Crss (typical 6.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Specifications

Status Last Shipments Case Outline 221AT
MSL Temp (°C) 0 Container Type TUBE

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Ratings and Reviews

More
L
L**m 12/15/2022

Received 90/100. Everything I have ordered was received at least 1 piece for every 10 purchased. Most of them works as supposed.

17
S
S**a 09/29/2022

Best seller, fast shipping (27 days to Macedonia), good quality, not tested yet.

3
L
L**s 04/28/2021

Put it in the mailbox.Everything works.The order was long.Received 168 did not understand how to order 328.

7
C
C**n 02/10/2021

Ok. The diameter of the landing is slightly more than 6mm, but there is a pressing screw.

14

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FQPF5N60C Datasheet PDF

Preliminary Specification FQPF5N60C PDF Download

FQPF5N60C PDF Preview

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Availability: 3721 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $0.890 $0.89
10+ $0.741 $7.41
30+ $0.666 $19.98
100+ $0.593 $59.30
500+ $0.548 $274.00
1000+ $0.525 $525.00

The prices below are for reference only.

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