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Trans RF BJT NPN 50V 0.8A 500mW 4-Pin Case UB
3-SMDManufacturer:
Mfr.Part #:
JANTXV2N2222AUB
Datasheet:
Mounting Style:
SMD/SMT
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
50 V
EDA/CAD Models:
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Here's a concise introduction to the JANTXV2N2222AUB: The JANTXV2N2222AUB is a high-reliability bipolar transistor (BJT) designed for small-signal applications in harsh environments. Manufactured by Crystalonics Inc., this NPN transistor operates at 40V with a current rating of 800mA and frequency response up to 300MHz. It features a power dissipation capability of 1.2W, making it suitable for high-power applications. The JANTXV2N2222AUB is qualified to MIL-PRF-19500/255, ensuring its reliability in extreme temperatures (-65°C to 200°C) and environments. Its through-hole package (TO-18) makes it easy to integrate into various systems. This transistor is designed for high-reliability applications in the military, aerospace, medical, industrial automation, telecommunications, and power supply industries.
According to the product information, the features of JANTXV2N2222AUB are:
These features demonstrate the device's suitability for high-reliability applications in various industries, such as military and aerospace.
The package type for JANTXV2N2222AUB is Through Hole TO-18 (CaseUB-4).
According to the product information, the package type is CaseUB-4, which is a through-hole TO-18 package. The pin count for this package is not explicitly stated, but it's common for TO-18 packages to have 3 pins. The function of JANTXV2N2222AUB is a Bipolar Transistor (BJT) NPN type, designed for small-signal applications with a maximum voltage rating of 50V and current rating of 800mA. It operates at frequencies up to 300MHz and has a power dissipation capability of 1.2W. In summary, the pin count is likely 3 pins (base, collector, and emitter), and the function is as a small-signal NPN transistor for general-purpose applications.
The manufacturer of the JANTXV2N2222AUB is Crystalonics Inc.
According to the product information, the application areas for JANTXV2N2222AUB are:
Based on the product information, the equivalent products of JANTXV2N2222AUB are:
Please note that these equivalent products may not be direct replacements, but can be used as substitutes in specific applications. It's always recommended to verify the compatibility and specifications before making a replacement.
Product Category: | Bipolar Transistors - BJT | Mounting Style: | SMD/SMT |
Transistor Polarity: | NPN | Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 50 V | Collector- Base Voltage VCBO: | 75 V |
Emitter- Base Voltage VEBO: | 6 V | Collector-Emitter Saturation Voltage: | 300 mV |
Maximum DC Collector Current: | 800 mA | Pd - Power Dissipation: | 500 mW |
Gain Bandwidth Product fT: | - | Minimum Operating Temperature: | - 65 C |
Maximum Operating Temperature: | + 200 C | Packaging: | Waffle |
DC Collector/Base Gain hfe Min: | 75 at 1 mA, 10 VDC | DC Current Gain hFE Max: | 325 at 1 mA, 10 VDC |
Product Type: | BJTs - Bipolar Transistors | Factory Pack Quantity: | 1 |
Subcategory: | Transistors | Technology: | Si |
Unit Weight: | 0.127590 oz | Transistor Type | NPN |
Current - Collector (Ic) (Max) | 800 mA | Voltage - Collector Emitter Breakdown (Max) | 50 V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA | Current - Collector Cutoff (Max) | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | Power - Max | 500 mW |
Frequency - Transition | - | Operating Temperature | -65°C ~ 200°C (TJ) |
Grade | Military | Qualification | MIL-PRF-19500/255 |
Mounting Type | Surface Mount | Base Product Number | 2N2222 |
Package/Case | 3-SMD |
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Everything works fine! It would be nice to attach the driver in the description.