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See Technical Specifications

FQP5N60C

N-Channel 600 V 4.5A (Tc) 100W (Tc) Through Hole TO-220-3

Manufacturer:

onsemi
Mfr.Part #:

FQP5N60C
Datasheet:

FQP5N60C Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQP5N60C

Email: [email protected]

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Tel: +852 95804164

FQP5N60C General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

4.5A, 600V, R_DS(on) = 2.5Ω(Max.) @V_GS = 10 V, I_D = 2.25A
Low gate charge ( Typ. 15nC)
Low C_rss ( Typ. 6.5pF)
100% avalanche tested

Application

Lighting

Specifications

Source Content uid	FQP5N60C	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	100 Weeks, 5 Days
Avalanche Energy Rating (Eas)	210 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	4.5 A
Drain-source On Resistance-Max	2.5 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	100 W	Pulsed Drain Current-Max (IDM)	18 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
REACH	Details	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	4.5 A	Rds On - Drain-Source Resistance	2.5 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	19 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	100 W
Channel Mode	Enhancement	Tradename	QFET
Series	FQP5N60C	Fall Time	46 ns
Forward Transconductance - Min	4.7 S	Height	16.3 mm
Length	10.67 mm	Product Type	MOSFET
Rise Time	42 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	10 ns	Width	4.7 mm
Part # Aliases	FQP5N60C_NL	Unit Weight	0.068784 oz