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FQPF10N20C +BOM

N-Channel 200 V 9.5A (Tc) 38W (Tc) Through Hole TO-220F-3

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

FQPF10N20C
Datasheet:

FQPF10N20C Datasheet (PDF)
Case Outline:

221AT
MSL Temp (°C):

0
Container Type:

TUBE
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for FQPF10N20C

Email: [email protected]

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Tel: +852 95804164

FQPF10N20C General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

9.5A, 200V, R_DS(on) = 360mΩ(Max.) @V_GS = 10 V, I_D = 4.75A
Low gate charge ( Typ. 20nC)
Low C_rss ( Typ. 40.5pF)
100% avalanche tested

Application

CRT/RPTV

Specifications

Status	Last Shipments	Case Outline	221AT
MSL Temp (°C)	0	Container Type	TUBE
Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	9.5 A	Rds On - Drain-Source Resistance	360 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	26 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	38 W
Channel Mode	Enhancement	Tradename	QFET
Series	FQPF10N20C	Configuration	Single
Fall Time	72 ns	Forward Transconductance - Min	5.5 S
Height	16.07 mm	Length	10.36 mm
Product Type	MOSFET	Rise Time	92 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	70 ns	Typical Turn-On Delay Time	11 ns
Width	4.9 mm	Part # Aliases	FQPF10N20C_NL
Unit Weight	0.068784 oz