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See Technical Specifications

SI7135DP-T1-GE3

8-Pin PowerPAK SO T/R P-Channel Trans MOSFET 30V 31.6A

Manufacturer:

VISHAY
Mfr.Part #:

SI7135DP-T1-GE3
Datasheet:

SI7135DP-T1-GE3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for SI7135DP-T1-GE3

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SI7135DP-T1-GE3 General Description

Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-60000mA; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.0062ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:3.25W ;RoHS Compliant: Yes

Key Features

TrenchFET® power MOSFET

100 % Rg tested

?www.vishay.com/doc?99912

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	60 A
Rds On - Drain-Source Resistance	3.9 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	167 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	104 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI7
Configuration	Single	Fall Time	50 ns
Forward Transconductance - Min	95 S	Height	1.04 mm
Length	6.15 mm	Product Type	MOSFET
Rise Time	100 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	110 ns	Typical Turn-On Delay Time	110 ns
Width	5.15 mm	Part # Aliases	SI7135DP-GE3
Unit Weight	0.017870 oz