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See Technical Specifications

GT40WR21

IGBT Transistors

Manufacturer:

Toshiba Semiconductor
Mfr.Part #:

GT40WR21
Datasheet:

GT40WR21 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.8 kV
EDA/CAD Models:

Request Free CAD Models for GT40WR21

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Email: [email protected]

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Skype: live:.cid.ab6b29428937b76

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Tel: +852 95804164

GT40WR21 General Description

Feature:Fast switching / Low saturation voltage
Number of Circuits:2
Built-in Diodes:Yes
RoHS Compatible Product(s) (#):Available
Assembly bases:Japan

Toshiba Semiconductor Inventory

Toshiba Semiconductor Original Stock

Specifications

Product Category:	IGBT Transistors	Technology:	Si
Mounting Style:	Through Hole	Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.8 kV	Collector-Emitter Saturation Voltage:	2.9 V
Maximum Gate Emitter Voltage:	- 25 V, 25 V	Continuous Collector Current at 25 C:	40 A
Pd - Power Dissipation:	375 W	Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C	Series:	GT40WR21
Continuous Collector Current Ic Max:	80 A	Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors	Subcategory:	IGBTs

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Ratings and Reviews

More

B

B**n 09/07/2023

Truly this seller if you know what is done because i have ordered several from other sellers and they were not the hmc5883l

15

S

S**e 02/03/2023

Jimmy is great sales and he always gives me reasonable price. quality is good as well

5

E

E**a 09/04/2021

Very long, did not check

2

Reviews

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