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K9F1G08U0A-PCB0

Flash, 128MX8, 20ns, PDSO48

K9F1G08U0A-PCB0 General Description

GENERAL DESCRIPTIONOffered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08U0B′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08U0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.FEATURES• Voltage Supply - 3.3V Device(K9F1G08U0B) : 2.70V ~ 3.60V• Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit• Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte• Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max.) - Serial Access : 25ns(Min.)• Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.)• Command/Address/Data Multiplexed I/O Port• Hardware Data Protection - Program/Erase Lockout During Power Transitions• Reliable CMOS Floating-Gate Technology -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC) - Data Retention : 10 Years• Command Driven Operation• Intelligent Copy-Back with internal 1bit/528Byte EDC• Unique ID for Copyright Protection• Package : - K9F1G08U0B-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

Key Features

  • 1. Density: 1 Gbit (128 Mbyte)
  • 2. Organization: 128 M x 8 bit
  • 3. Interface: Toggle DDR
  • 4. Supply Voltage: 2.7V to 3.6V
  • 5. Page Size: 2 Kbyte
  • 6. Block Size: 128 Kbyte
  • 7. Programming Time: 200 μs (typical)
  • 8. Erase Time: 2 ms (typical)
  • 9. Operating Temperature Range: -25°C to +85°C

Application

  • 1. Mobile phones
  • 2. Digital cameras
  • 3. Portable media players
  • 4. Tablets
  • 5. Solid-state drives (SSDs)
  • 6. Industrial applications

Specifications

Product Category IC Chips

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L
L**n 01/07/2021

The parcel was deployed halfway! The give 5 star.

11

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