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HGTG30N60A4D
600V, SMPS IGBT
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Manufacturer: ON Semiconductor, LLC
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Mfr.Part #: HGTG30N60A4D
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Datasheet: HGTG30N60A4D Datasheet (PDF)
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Package/Case: TO-247-3
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Product Type: Thyristors
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Lifecycle: Last Time Buy
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EDA/CAD Models: Request Free CAD Models for HGTG30N60A4D
Availability: 3769 PCS
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HGTG30N60A4D General Description
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.
Key Features
- 100kHz Operation at 390V, 30A
- 200kHz Operation at 390V, 18A
- 600V Switching SOA Capability
- Typical Fall Time. . . . . . . . . . 60ns at TJ = 125&°C
- Low Conduction Loss
- Temperature Compensating SABER™Model
Application
- AC-DC Merchant Power Supply - Servers & Workstations
Specifications
Status | Lifetime | Package Type | TO-247-3 |
Case Outline | 340CK | MSL Temp (°C) | 0 |
Container Type | TUBE |
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Availability: 3769 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $7.302 | $7.30 |
10+ | $6.451 | $64.51 |
30+ | $5.933 | $177.99 |
90+ | $5.223 | $470.07 |
The prices below are for reference only.
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