This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

K9F2G08U0A-PCB0

Flash, 256MX8, 20ns, PDSO48

Manufacturer:

SAMSUNG
Mfr.Part #:

K9F2G08U0A-PCB0
Datasheet:

K9F2G08U0A-PCB0 Datasheet (PDF)
Package/Case:

TSOP-48
EDA/CAD Models:

Request Free CAD Models for K9F2G08U0A-PCB0

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

K9F2G08U0A-PCB0 General Description

DescriptionOffered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. Features• Voltage Supply- 1.65V ~ 1.95V- 2.70V ~ 3.60V• Organization- Memory Cell Array : (256M + 8M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page Program : (2K + 64)Byte- Block Erase : (128K + 4K)Byte• Page Read Operation- Page Size : (2K + 64)Byte- Random Read : 25µs(Max.)- Serial Access : 25ns(Min.)(*K9F2G08R0A: tRC = 42ns(Min))• Fast Write Cycle Time- Page Program time : 200µs(Typ.)- Block Erase Time : 1.5ms(Typ.)• Command/Address/Data Multiplexed I/O Port• Hardware Data Protection- Program/Erase Lockout During Power Transitions• Reliable CMOS Floating-Gate Technology-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)- Data Retention : 10 Years• Command Driven Operation• Intelligent Copy-Back with internal 1bit/528Byte EDC• Unique ID for Copyright Protection• Package :- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- K9F2G08U0A-ICB0/IIB052 - Pin ULGA (12 x 17 / 1.00 mm pitch)

Key Features

1. It has a storage capacity of 2 gigabytes (2GB).
2. It operates on a single supply voltage of 2.7V to 3.6V.
3. The chip supports a page size of 2,112 bytes (2KB) and a block size of 128 pages (256KBytes).
4. It utilizes the NAND interface for high-speed data transfer.
5. It incorporates a low-power consumption design for efficient energy usage.
6. It offers various built-in advanced features like error correction codes (ECC) and wear-leveling algorithms.

Application

1. K9F2G08U0A-PCB0 is commonly used in consumer electronics such as smartphones, tablets, and digital cameras as a non-volatile storage solution for data and software.
2. It is also suitable for industrial applications, including embedded systems, automotive electronics, and medical devices, requiring reliable and high-density storage.
3. This component can be utilized in data storage devices like USB flash drives, solid-state drives (SSDs), and memory cards.