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IXFH88N30P

In Stock: 7,072

This is the IXFH88N30P MOSFET

IXFH88N30P Information

Description

The IXFH88N30P is a high-power Trans MOSFET from Littelfuse. It's designed for applications in power supplies, DC-DC converters, battery chargers, and motor drives. Key features include reduced gate charge for faster switching, fully isolated construction for safety, and compact TO-247AD package. The MOSFET is suitable for pulse width modulation (PWM) control, offering high efficiency and low electromagnetic interference (EMI).

Features

The IXFH88N30P features a combination of advanced electronic properties designed for high-performance applications. Some key features include:
Reduced Gate Charge: This allows faster switching, reducing energy loss.
Fully Isolated Construction: Ensures safety in circuits where isolation is crucial.
Latching Current Limit: Prevents permanent damage by limiting excessive current during a fault.
Robust In-Place Replacement: Design for easy swapping without the need for extensive reconfiguration. These features enable the IXFH88N30P to excel in various applications such as power supplies, DC-DC converters, and motor drives.

Package

The IXFH88N30P has a surface mount package, suitable for compact designs.

Pinout

The IXFH88N30P MOSFET has a pin count of three, typically including drain (D), gate (G), and source (S) pins. Functionally:
Drain (D): The output terminal where the current flows from the source to the load.
Gate (G): The input terminal that controls the flow of current through the MOSFET. A positive voltage applied to the gate relative to the source turns on the MOSFET, while a negative or zero voltage turns it off.
Source (S): The input terminal where the current flows into the MOSFET from the load. Please note that some packages may have additional pins for mounting or thermal connection.

Manufacturer

The manufacturer of the IXFH88N30P is LiteFuse, a company specializing in the design and production of high-power semiconductor devices, particularly MOSFETs for various industrial applications. LiteFuse focuses on innovation, reliability, and energy efficiency in their products.

Applications

The IXFH88N30P is a high-power N-channel MOSFET designed for use in various power supply applications, including switch-mode power supplies, DC-DC converters, battery chargers, UPS, and AC motor drives.

Equivalent

IXFH88N30P is a specific MOSFET from Littelfuse. Equivalent products would be other N-channel MOSFETs with similar voltage rating (300V) and current capability (88A). Some common brands for such devices include ON Semiconductors, STMicroelectronics, and Infineon Technologies.

Specifications

Drain-Source Voltage (V) 300 Maximum On-Resistance @ 25 ℃ (Ohm) 0.04
Continuous Drain Current @ 25 ℃ (A) 88 Gate Charge (nC) 180
Input Capacitance, CISS (pF) 6300 Thermal resistance [junction-case] (K/W) 0.21
Configuration Single Power Dissipation (W) 600
Maximum Reverse Recovery (ns) 200 Sample Request No
Check Stock Yes Package/Case TO-247-3

IXFH88N30P FAQs

1.Q: What makes the IXF HiPerFET suitable for motor control?

A: Its low Qg (gate charge), fast body diode, and high dV/dt tolerance minimize switching losses in phase-shift bridge designs.

2.Q: Is the IXF HiPerFET compliant with industry certifications?

A: Yes, it is RoHS-compliant and follows JEDEC standards (TO-247AD package). The ECCN code is EAR99.

3.Q: What is the operating temperature range for the IXF HiPerFET?

A: It can operate up to 150°C, with a maximum power dissipation of 600W.

4.Q: Does the IXF HiPerFET include built-in protection features?

A: Yes, it is avalanche-rated (Eas = 2000mJ) and has a built-in fast-recovery diode for ruggedness in switching applications.

5.Q: What is the breakdown voltage range of the IXF HiPerFET?

A: The drain-source breakdown voltage is rated for a minimum of 300V.

6.Q: What is the maximum drain current (ID) for the IXF HiPerFET?

A: The absolute maximum drain current is 88A (continuous) and 220A (pulsed).

7.Q: What is the package type of the IXF HiPerFET?

A: It comes in a TO-247AD-3 package (flange mount, through-hole) with a matte tin finish, compliant with RoHS standards.

8.Q: What are the typical applications for IXF HiPerFETs?

A: They are optimized for phase-shift bridges, motor control, and uninterruptible power supplies (UPS) due to their fast diode recovery and high-current handling (88A continuous).

9.Q: What are the key features of the IXF series HiPerFETs?

A: The IXF series offers lowest RDS(on) (0.04Ω), low thermal resistance (RthJC), fast body diode (reduced trr), high avalanche energy rating (2000mJ), and enhanced dV/dt capability, making it ideal for high-efficiency switching.

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