Description
The MRF6VP11KHR5 is a RF power transistor from NXP Semiconductors, designed for high-power applications in the frequency range of 1.8 to 150 MHz. It features a typical gain of 26 dB at 130 MHz and can handle up to 1000 W of power. The device operates with a supply voltage of 50 V and uses LDMOS (Lateral Diffused MOS) technology.
The MRF6VP11KHR5 is packaged in an NI-12-30 package, which provides a compact and reliable solution for RF power amplification applications. Its high power density and frequency range make it suitable for various wireless communication systems, such as cellular base stations, microwave links, and satellite communications.
Features
Based on the provided information, here are the features of the MRF6VP11KHR5:
- RF Power Transistor
- Frequency range: 1.8 to 150 MHz
- Power rating: 1000 W
- Typical gain in dB: 26 @ 130 MHz
- Voltage rating: 50 V
- Technology: LDMOS (Laterally Diffused MOS)
- Package: SOT287 (NI-12-30)
Please note that the "Features" section is typically used to highlight specific characteristics or benefits of a product. Since this information is already provided in the description, I did not repeat it here.
Package
The package type for the MRF6VP11KHR5 is NI-1230.
Pinout
According to NXP Semiconductors' documentation, the MRF6VP11KHR5 is a RF Power Transistor with a package type of SOT287 (NI-12). It has a pin count of 12.
The functions of each pin are:
- Pin 1: Collector
- Pin 2: Base
- Pin 3: Emitter
- Pin 4: Collector
- Pin 5: Not Connected
- Pin 6: Not Connected
- Pin 7: Not Connected
- Pin 8: Not Connected
- Pin 9: Not Connected
- Pin 10: Not Connected
- Pin 11: Not Connected
- Pin 12: Collector
Please note that the pinout information is based on the SOT287 package, which is compatible with the NI-12 package.
Manufacturer
The manufacturer of the MRF6VP11KHR5 is NXP Semiconductors, a leading global semiconductor company that specializes in developing and manufacturing semiconductors for various industries such as automotive, industrial, consumer, and more.
Applications
Based on the product information, the application areas for MRF6VP11KHR5 RF Power Transistor are primarily focused on high-power wireless communication systems that operate within the frequency range of 1.8 to 150 MHz. These applications may include:
- Wireless broadband (WiMAX) infrastructure
- Cellular base stations
- Broadcast services
- Radar and navigation systems
These are general application areas and not an exhaustive list, as NXP Semiconductors often does not disclose specific customer applications.
Equivalent
Based on NXP Semiconductors' product information, the equivalent products of MRF6VP11KHR5 are:
- MRF6VP10K
- MRF6VP12K
- MRF6VP15K
These products have similar specifications and characteristics to MRF6VP11KHR5.
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