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2N6661

TO-5-3 MOSFETs ROHS

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2N6661 General Description

The 2N6661 is an N-channel enhancement-mode MOSFET transistor designed for various switching and amplification applications. It is capable of handling moderate voltage and current levels, making it suitable for a wide range of electronic circuits.

2n6661 2n6661

Key Features

    • Free from secondary breakdown
    • Low power drive requirement
    • Ease of paralleling
    • Low CISS and fast switching speeds
    • Excellent thermal stability
    • Integral source-drain diode
    • High input impedance and high gain
2n6661 2n6661

Application

  • Switching Circuits: It can be used as a general-purpose switch to control the flow of current in electronic circuits.
  • Amplification: The transistor can be used for small-signal amplification in audio and RF applications.
  • Voltage Level Shifter: It can be used as a level shifter or voltage translator to interface between different voltage domains.
  • Power Supplies: The 2N6661 can be used in power supply circuits for voltage regulation or switching purposes.
  • Motor Control: It can be used in low-power motor control circuits.
  • General Purpose Applications: It is suitable for various low- to moderate-power electronic circuits requiring an N-channel MOSFET.
2n6661 2n6661

Specifications

Product Category: MOSFET Technology: Si
Mounting Style: Through Hole Transistor Polarity: N-Channel
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 10 V
Id - Continuous Drain Current: 350 mA Rds On - Drain-Source Resistance: 4 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 800 mV
Qg - Gate Charge: - Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W
Channel Mode: Enhancement Packaging: Bulk
Configuration: Single Forward Transconductance - Min: 170 mS
Product Type: MOSFET Factory Pack Quantity: 500
Subcategory: MOSFETs Transistor Type: 1 N-Channel
Type: FET Typical Turn-Off Delay Time: 10 ns
Typical Turn-On Delay Time: 10 ns Unit Weight: 0.039133 oz
feature-category Power MOSFET feature-material Si
feature-process-technology DMOS feature-configuration Single
feature-channel-mode Enhancement feature-channel-type N
feature-number-of-elements-per-chip 1 feature-maximum-drain-source-voltage-v 90
feature-maximum-gate-source-voltage-v ±20 feature-maximum-gate-threshold-voltage-v
feature-maximum-continuous-drain-current-a 0.35 feature-maximum-drain-source-resistance-mohm 4000@10V
feature-typical-gate-charge-vgs-nc feature-typical-gate-charge-10v-nc
feature-typical-input-capacitance-vds-pf 50(Max)@24V feature-typical-output-capacitance-pf
feature-maximum-power-dissipation-mw 6250 feature-packaging Bag
feature-rad-hard feature-pin-count 3
feature-cecc-qualified No feature-esd-protection
feature-escc-qualified feature-military No
feature-aec-qualified No feature-aec-qualified-number
feature-auto-motive No feature-p-pap No
feature-eccn-code EAR99 feature-svhc No
feature-svhc-exceeds-threshold No

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The book came very quickly, less than a month before minsk. Looks very cute, small compact. Measured several resistors, really accuracy is less than 1%. Thank you to the seller, very satisfied!

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It took a short time. But it came in good shape. The product is as described.

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