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SI7119DN-T1-E3
Single P-Channel 200 V 1.05 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8
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Manufacturer:
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Mfr.Part #:
SI7119DN-T1-E3
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Datasheet:
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
200 V
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Current - Continuous Drain (Id) @ 25°C:
3.8A (Tc)
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EDA/CAD Models:
Availability: 6351 PCS
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SI7119DN-T1-E3 General Description
MOSFET, DUAL, N, POWERPAK; Transistor Type:TrenchFET; Transistor Polarity:Dual N; Voltage, Vds Typ:-200V; Current, Id Cont:3.6A; Resistance, Rds On:1.1ohm; Voltage, Vgs Rds on Measurement:6V; Voltage, Vgs th Typ:-4V; Case Style:PowerPAK; Termination Type:SMD; Base Number:7119; Current, Idm Pulse:5A; N-channel Gate Charge:10.6nC; Power Dissipation:52mW; Voltage, Vds Max:200V; Voltage, Vgs th Min:-2V
Key Features
Application
Active Clamp in Intermediate DC/DC Power SuppliesSpecifications
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V | Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 1.05Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 666 pF @ 50 V |
FET Feature | - | Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
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Availability: 6351 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.593 | $0.59 |
10+ | $0.529 | $5.29 |
30+ | $0.496 | $14.88 |
100+ | $0.464 | $46.40 |
500+ | $0.398 | $199.00 |
1000+ | $0.389 | $389.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for SI7119DN-T1-E3, guaranteed quotes back within 12hr.
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