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See Technical Specifications

TIP147G

10 A, 100 V PNP Darlington Bipolar Power Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

TIP147G
Datasheet:

TIP147G Datasheet (PDF)
Case Outline:

340L
MSL Temp (°C):

0
Container Type:

TUBE
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for TIP147G

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

TIP147G General Description

Bipolar Transistor, Pnp, -100V, To-247; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi TIP147G.

Key Features

High DC Current Gain
Min h_FE = 1000 @ I_C
= 5 A, V_CE = 4 V
Collector-Emitter Sustaining Voltage @ 30 mA
V_CEO(sus) = 60 Vdc (Min) TIP140, TIP145
V_CEO(sus) = 80 Vdc (Min) TIP141, TIP146
V_CEO(sus) = 100 Vdc (Min) TIP142, TIP147
Monolithic Construction with Built-In Base-Emitter Shunt Resistor
Pb-Free Packages are Available

Specifications

Status	Active	Case Outline	340L
MSL Temp (°C)	0	Container Type	TUBE
Product Category	Darlington Transistors	Configuration	Single
Transistor Polarity	PNP	Collector- Emitter Voltage VCEO Max	100 V
Emitter- Base Voltage VEBO	5 V	Collector- Base Voltage VCBO	100 V
Maximum DC Collector Current	10 A	Maximum Collector Cut-off Current	1 mA
Mounting Style	Through Hole	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Series	TIP147
DC Collector/Base Gain hfe Min	500, 1000	Height	12.2 mm
Length	15.2 mm	Product Type	Darlington Transistors
Factory Pack Quantity	30	Subcategory	Transistors
Width	4.9 mm	Unit Weight	0.229281 oz