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See Technical Specifications

SI7113DN-T1-E3 +BOM

Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R / MOSFET P-CH 100V 13.2A 1212-8

Manufacturer:

VISHAY
Mfr.Part #:

SI7113DN-T1-E3
Datasheet:

SI7113DN-T1-E3 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
Avalanche Energy Rating (Eas):

11.25 mJ
Case Connection:

DRAIN
EDA/CAD Models:

Request Free CAD Models for SI7113DN-T1-E3

Email: [email protected]

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Tel: +852 95804164

SI7113DN-T1-E3 General Description

Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:3V; Power Dissipation:3.7W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI7113DN-T1-E3.

Key Features

4.5V to 24V Input Voltage Range
6A Output Current
45mΩInternal High Side N-MOSFET
Current Mode Control
600kHz Switching Frequency
Adjustable Output from 0.8V to 15V
Up to 95% Efficiency
Internal Compensation
Stable with Ceramic Capacitors
Synchronous External Clock : 300kHz to 1.5MHz
Cycle-by-Cycle Current Limit
Input Under Voltage Lockout
Output Under Voltage Protection
Power Good Indicator
Thermal Shutdown Protection
RoHS Compliant and Halogen Free

Application

Active Clamp in Intermediate DC/DC Power Supplies

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Avalanche Energy Rating (Eas)	11.25 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	13.2 A	Drain-source On Resistance-Max	0.134 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	S-PDSO-F5
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-50 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	52 W	Pulsed Drain Current-Max (IDM)	20 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	PURE MATTE TIN	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	80 ns	Turn-on Time-Max (ton)	38 ns