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See Technical Specifications

IXTQ460P2

N-Channel 500 V 24A (Tc) 480W (Tc) Through Hole TO-3P

Manufacturer: Littelfuse Inc
Mfr.Part #: IXTQ460P2
Datasheet: IXTQ460P2 Datasheet (PDF)
Series: PolarP2™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
EDA/CAD Models: Request Free CAD Models for IXTQ460P2

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXTQ460P2 General Description

Polar2™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar2 Standard MOSFETs feature low gate charge Qgvalues, resulting in more efficient switching at all frequencies. This gives the designer the option tooperate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients.

Key Features

International Standard Packages
Dynamic dv/dt rating
Low R
DS(on)
and Q
g
Avalanche Rated
Low Package Inductance

Application

DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
Lamp ballasts
AC and DC Motor Drives
Robotics and Servo Controls
Laser drivers
Advantages:
Easy to mount
Space savings
High power density

Specifications

Series	PolarP2™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	270mOhm @ 12A, 10V	Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V	Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2890 pF @ 25 V	Power Dissipation (Max)	480W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXTQ460	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	500 V	Id - Continuous Drain Current	24 A
Rds On - Drain-Source Resistance	270 mOhms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	4.5 V	Qg - Gate Charge	48 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	480 W	Channel Mode	Enhancement
Tradename	Polar2 HiPerFET	Configuration	Single
Factory Pack Quantity	30	Transistor Type	1 N-Channel
Type	PolarP2 Power MOSFET	Unit Weight	0.056438 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

L**m 08/06/2023

Delivery is fast, just over two weeks from the moment of order (ordered 10 pieces). Resistors are normal, tested with tester, the difference in resistance within error. Thank you to the seller.

A**a 06/08/2023

Leds are good. Shine norms. The number and parameters correspond to the specified.

A**n 09/17/2021

Corresponds to the description. Packed in a package with pouches, all ok!!!

G**n 06/20/2020

All Works perfectly, thank you!