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IRF510S

MOSFET RECOMMENDED ALT 844-IRF510SPBF

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IRF510S General Description

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3

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Key Features

  • Surface-mount
  • Available in tape and reel
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • 175 °C operating temperature
  • Fast switching
  • Ease of paralleling
    • Vishay Original Stock
    Vishay Inventory

    Specifications

    Product Category MOSFET Technology Si
    Mounting Style SMD/SMT Series IRF
    Height 4.83 mm Length 10.67 mm
    Product Type MOSFET Factory Pack Quantity 50
    Subcategory MOSFETs Width 9.65 mm
    Unit Weight 0.139332 oz

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