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NVMFD5C470NLT1G
Dual N−Channel Power MOSFET 40V, 36A, 11.5mΩ
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Manufacturer:
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Mfr.Part #:
NVMFD5C470NLT1G
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Datasheet:
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Series:
Automotive, AEC-Q101
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Technology:
MOSFET (Metal Oxide)
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Configuration:
2 N-Channel (Dual)
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Drain to Source Voltage (Vdss):
40V
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EDA/CAD Models:
Availability: 5370 PCS
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NVMFD5C470NLT1G General Description
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Key Features
- Small Footprint (5x6 mm)
- Low rDS(on)
- Low QG and Capacitance
- NVMFD5C470NLWF − Wettable Flank Option
- AEC−Q101 Qualified and PPAP Capable
- RoHS Compliant
Application
- Solenoid driver
- Low side / high side driver
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays | Series | Automotive, AEC-Q101 |
Technology | MOSFET (Metal Oxide) | Configuration | 2 N-Channel (Dual) |
FET Feature | - | Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 36A (Tc) | Rds On (Max) @ Id, Vgs | 11.5mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 20µA | Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 25V | Power - Max | 3W (Ta), 24W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | NVMFD5 |
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NVMFD5C470NLT1G Datasheet PDF
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Availability: 5370 PCS
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