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2SK1506

Power Field-Effect Transistor, 50A I(D), 120V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3P, 3 PIN

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2SK1506 General Description

Power Field-Effect Transistor, 50A I(D), 120V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3P, 3 PIN

Key Features

  • High current
  • Low on-resistance
  • Low driving power
  • High forward transconductance

Specifications

Part Life Cycle Code Obsolete Pin Count 3
ECCN Code EAR99 Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 120 V
Drain Current-Max (Abs) (ID) 50 A Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.045 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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