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See Technical Specifications

NTE4153NT1G

Transistor Metal Oxide Semiconductor Field Effect N-Channel 20 Volt 0.915 Amp 3-Pin SC-89 Tape and Reel

Manufacturer:

ONSEMI
Mfr.Part #:

NTE4153NT1G
Datasheet:

NTE4153NT1G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

463C-02
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for NTE4153NT1G

Email: [email protected]

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NTE4153NT1G General Description

N Channel Mosfet, 20V, 915Ma, Sc-89, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:915Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:300Mw Rohs Compliant: Yes |Onsemi NTE4153NT1G.

Key Features

Low R_DS(on) Improving System Efficiency
Low Threshold Voltage, 1.5V Rated
ESD Protected Gate

Application

Load/Power Switches
Power Supply Converter Circuits
Battery Management
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.

Specifications

Status	Active	Compliance	PbAHP
Case Outline	463C-02	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	3000	ON Target	N
Channel Polarity	N-Channel	Configuration	Single
V(BR)DSS Min (V)	20	VGS Max (V)	6
VGS(th) Max (V)	1.1	ID Max (A)	0.9
PD Max (W)	0.33	RDS(on) Max @ VGS = 2.5 V (mΩ)	275
RDS(on) Max @ VGS = 4.5 V (mΩ)	230	Qg Typ @ VGS = 10 V (nC)	1.82
Ciss Typ (pF)	110	Pricing ($/Unit)	$0.0632Sample