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See Technical Specifications

MMUN2233LT1G

NPN Bipolar Digital Transistor (BRT)

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

MMUN2233LT1G
Datasheet:

MMUN2233LT1G Datasheet (PDF)
Transistor Type:

NPN - Pre-Biased
Current - Collector (Ic) (Max):

100 mA
Voltage - Collector Emitter Breakdown (Max):

50 V
Resistor - Base (R1):

4.7 kOhms
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MMUN2233LT1G General Description

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Key Features

Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single, Pre-Biased Bipolar Transistors	Series	-
Transistor Type	NPN - Pre-Biased	Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA	Current - Collector Cutoff (Max)	500nA
Power - Max	246 mW	Mounting Type	Surface Mount
Base Product Number	MMUN2233	Product Category	Bipolar Transistors - Pre-Biased
Configuration	Single	Transistor Polarity	NPN
Typical Input Resistor	4.7 kOhms	Typical Resistor Ratio	0.1
Mounting Style	SMD/SMT	DC Collector/Base Gain hfe Min	80, 200
Collector- Emitter Voltage VCEO Max	50 V	Continuous Collector Current	100 mA
Peak DC Collector Current	100 mA	Pd - Power Dissipation	246 mW
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
DC Current Gain hFE Max	80	Height	0.94 mm
Length	2.9 mm	Product Type	BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity	3000	Subcategory	Transistors
Width	1.3 mm	Unit Weight	0.000282 oz