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MMUN2233LT1G +BOM

NPN Bipolar Digital Transistor (BRT)

MMUN2233LT1G Information

Description

The MMUN2233LT1G is a digital transistor from ON Semiconductor, packaged in a SOT-23-3 package. It's an NPN transistor with a maximum current gain of 80 at 5mA collector current and 10V base-emitter voltage. The device has a maximum power dissipation of 246mW and can handle up to 100mA of collector current at 50V. It also features very low leakage current, making it suitable for applications where high input impedance is required. The MMUN2233LT1G is designed for use in digital circuits, such as logic gates, flip-flops, and counters. Its small size and low power consumption make it an attractive option for portable devices and battery-powered systems. The transistor's pre-biased design simplifies circuit design and reduces the need for external biasing components. Overall, the MMUN2233LT1G is a reliable and efficient digital transistor suitable for a wide range of applications.

Package

The package type of MMUN2233LT1G is SOT-23-3.

Manufacturer

The manufacturer of the MMUN2233LT1G is ON Semiconductor (also known as Onsemi). Onsemi is a global company that specializes in designing, manufacturing, and providing electronic components, including transistors, memory products, and sensors. The company was founded in 1999 and is headquartered in Phoenix, Arizona, USA.

Applications

The MMUN2233LT1G digital transistor from ON Semiconductor is suitable for various applications, including:

  • Portable electronics (smartphones, tablets, laptops)
  • Industrial control systems
  • Medical devices (e.g., patient monitoring equipment)
  • Automotive systems (e.g., infotainment, safety features)
  • Aerospace and defense systems

Its small package size, low power consumption, and high performance make it an ideal choice for applications requiring compact designs and efficient energy use.

Equivalent

Based on the product information, MMUN2233LT1G is a digital transistor from ON Semiconductor. Equivalent products may include:

  • NXP PCA9306
  • STMicroelectronics TIP120C
  • Texas Instruments SN754410
  • Fairchild FET1014P

Please note that equivalent products may vary depending on specific application and requirements.

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single, Pre-Biased Bipolar Transistors Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA Power - Max 246 mW
Mounting Type Surface Mount Base Product Number MMUN2233
Product Category Bipolar Transistors - Pre-Biased Configuration Single
Transistor Polarity NPN Typical Input Resistor 4.7 kOhms
Typical Resistor Ratio 0.1 Mounting Style SMD/SMT
DC Collector/Base Gain hfe Min 80, 200 Collector- Emitter Voltage VCEO Max 50 V
Continuous Collector Current 100 mA Peak DC Collector Current 100 mA
Pd - Power Dissipation 246 mW Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C DC Current Gain hFE Max 80
Height 0.94 mm Length 2.9 mm
Product Type BJTs - Bipolar Transistors - Pre-Biased Factory Pack Quantity 3000
Subcategory Transistors Width 1.3 mm
Unit Weight 0.000282 oz Package/Case SOT23

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Ratings and Reviews

More
B
B**n 08/25/2022

Corresponds to the description, in odessa 23 days, i recommend.

16
A
A**a 12/03/2021

Thanks everything ok

7
S
S**n 11/30/2021

Excellent everything works i'm happy to order.

13
M
M**n 04/10/2021

Works. everything is as in the description.

6

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MMUN2233LT1G Datasheet PDF

Preliminary Specification MMUN2233LT1G PDF Download

MMUN2233LT1G PDF Preview

In Stock: 6,743

Minimum Order: 1

Qty. Unit Price Ext. Price
3000+ $0.016 $48.00
20+ $0.026 $0.52
200+ $0.021 $4.20
600+ $0.018 $10.80
9000+ $0.015 $135.00
21000+ $0.014 $294.00

The prices above are for reference only.

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