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NPN Bipolar Digital Transistor (BRT)
SOT23Manufacturer:
Mfr.Part #:
MMUN2233LT1G
Datasheet:
Series: MMUN2233L
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
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The MMUN2233LT1G is a digital transistor from ON Semiconductor, packaged in a SOT-23-3 package. It's an NPN transistor with a maximum current gain of 80 at 5mA collector current and 10V base-emitter voltage. The device has a maximum power dissipation of 246mW and can handle up to 100mA of collector current at 50V. It also features very low leakage current, making it suitable for applications where high input impedance is required. The MMUN2233LT1G is designed for use in digital circuits, such as logic gates, flip-flops, and counters. Its small size and low power consumption make it an attractive option for portable devices and battery-powered systems. The transistor's pre-biased design simplifies circuit design and reduces the need for external biasing components. Overall, the MMUN2233LT1G is a reliable and efficient digital transistor suitable for a wide range of applications.
The package type of MMUN2233LT1G is SOT-23-3.
The manufacturer of the MMUN2233LT1G is ON Semiconductor (also known as Onsemi). Onsemi is a global company that specializes in designing, manufacturing, and providing electronic components, including transistors, memory products, and sensors. The company was founded in 1999 and is headquartered in Phoenix, Arizona, USA.
The MMUN2233LT1G digital transistor from ON Semiconductor is suitable for various applications, including:
Its small package size, low power consumption, and high performance make it an ideal choice for applications requiring compact designs and efficient energy use.
Based on the product information, MMUN2233LT1G is a digital transistor from ON Semiconductor. Equivalent products may include:
Please note that equivalent products may vary depending on specific application and requirements.
Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single, Pre-Biased Bipolar Transistors | Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100 mA | Voltage - Collector Emitter Breakdown (Max) | 50 V |
Resistor - Base (R1) | 4.7 kOhms | Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V | Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA | Power - Max | 246 mW |
Mounting Type | Surface Mount | Base Product Number | MMUN2233 |
Product Category | Bipolar Transistors - Pre-Biased | Configuration | Single |
Transistor Polarity | NPN | Typical Input Resistor | 4.7 kOhms |
Typical Resistor Ratio | 0.1 | Mounting Style | SMD/SMT |
DC Collector/Base Gain hfe Min | 80, 200 | Collector- Emitter Voltage VCEO Max | 50 V |
Continuous Collector Current | 100 mA | Peak DC Collector Current | 100 mA |
Pd - Power Dissipation | 246 mW | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | DC Current Gain hFE Max | 80 |
Height | 0.94 mm | Length | 2.9 mm |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | Factory Pack Quantity | 3000 |
Subcategory | Transistors | Width | 1.3 mm |
Unit Weight | 0.000282 oz | Package/Case | SOT23 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
3000+ | $0.016 | $48.00 |
20+ | $0.026 | $0.52 |
200+ | $0.021 | $4.20 |
600+ | $0.018 | $10.80 |
9000+ | $0.015 | $135.00 |
21000+ | $0.014 | $294.00 |
The prices above are for reference only.
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