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See Technical Specifications

IXKK85N60C

N-Channel 600 V 85A (Tc) Through Hole TO-264AA

Manufacturer:

IXYS
Mfr.Part #:

IXKK85N60C
Datasheet:

IXKK85N60C Datasheet (PDF)
Series:

CoolMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

600 V
EDA/CAD Models:

Request Free CAD Models for IXKK85N60C

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IXKK85N60C General Description

These Power MOSFETs based on Super Junction technologyfeature the lowest RDS(on)in 600V-800V classMOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.

Key Features

Silicon chip on Direct-Copper-Bond substrate
3rd generation CoolMOS™
(1)
power MOSFET
Enhanced total power density
Low thermal resistance

Application

Switch mode power supplies
Uninterruptible power supplies
Power factor correction (PFC)
Welding
Inductive heating
Advantages:
Easy assembly
Space savings
High power density
(1)
CoolMOS™ is a trademark ofInfineon Technologies AG.

Specifications

Series	CoolMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	85A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	36mOhm @ 55A, 10V	Vgs(th) (Max) @ Id	4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	650 nC @ 10 V	Vgs (Max)	±20V
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXKK85