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See Technical Specifications

IPW65R080CFDFKSA1

MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2

Manufacturer:

Infineon
Mfr.Part #:

IPW65R080CFDFKSA1
Datasheet:

IPW65R080CFDFKSA1 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IPW65R080CFDFKSA1

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IPW65R080CFDFKSA1 General Description

Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3

Key Features

Static drain-source on-resistance:
RDS(on)≤80mΩ
Enhancement mode:
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	43.3 A	Rds On - Drain-Source Resistance	72 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3.5 V
Qg - Gate Charge	167 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	391 W
Channel Mode	Enhancement	Tradename	CoolMOS
Series	CoolMOS CFD2	Configuration	Single
Fall Time	6 ns	Height	21.1 mm
Length	16.13 mm	Product Type	MOSFET
Rise Time	18 ns	Factory Pack Quantity	240
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	85 ns	Typical Turn-On Delay Time	20 ns
Width	5.21 mm	Part # Aliases	IPW65R080CFD SP000745036
Unit Weight	0.211644 oz