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IPI80N06S407AKSA2

N-Channel 60 V 80A (Tc) 79W (Tc) Through Hole PG-TO262-3-1

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IPI80N06S407AKSA2 General Description

N-Channel 60 V 80A (Tc) 79W (Tc) Through Hole PG-TO262-3-1

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Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 80 A Rds On - Drain-Source Resistance 7.4 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 56 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 79 W
Channel Mode Enhancement Qualification AEC-Q101
Series IPI80N06 Configuration Single
Height 9.45 mm Length 10.2 mm
Product Type MOSFET Factory Pack Quantity 500
Subcategory MOSFETs Transistor Type 1 N-Channel
Width 4.5 mm Part # Aliases IPI80N06S4-07 SP001028676
Unit Weight 0.084199 oz

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Availability: 7072 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $1.246 $1.25
200+ $0.482 $96.40
500+ $0.465 $232.50
1000+ $0.457 $457.00

The prices below are for reference only.

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