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IKY75N120CS6XKSA1

IGBT Trench Field Stop 1200 V 150 A 880 W Through Hole PG-TO247-4-2

email Email: [email protected]
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IKY75N120CS6XKSA1 General Description

IGBT Trench Field Stop 1200 V 150 A 880 W Through Hole PG-TO247-4-2

Infineon Technologies Corporation Inventory

Key Features

  • High efficiency in hard switching and resonant topologies
  • Low saturation voltage if 1.85 V combined with low switching losses
  • Easy paralleling capability due to positive temperature coefficient in V
  • CEsat
  • Low EMI
  • Low Gate Charge Q
  • G
  • Very soft, fast recovery anti-parallel diode
  • High ruggedness, temperature stable behaviour
  • Very tight parameter distribution
  • High power density and low thermal resistance of the TO-247PLUS package
  • Lowest losses on IGBT, high system efficiency for higher power output
  • Fast and easy replacement of predecessor H3 technology
  • High device reliability and lifetime expectancy
  • Highest current of 75 A 1200 V IGBT with 75 A diode in TO-247 footprint
  • Lower thermal resistance R
  • th(jh)
  • Kelvin emitter pin brings reduction of total switching losses
Infineon Technologies Corporation Original Stock

Application

  • Fast EV charging
  • Industrial heating and welding
  • Uninterruptible Power Supplies (UPS)

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series TrenchStop™
IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 150 A Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A Power - Max 880 W
Switching Energy 2.2mJ (on), 2.95mJ (off) Input Type Standard
Gate Charge 530 nC Td (on/off) @ 25°C 32ns/300ns
Test Condition 600V, 75A, 4Ohm, 15V Reverse Recovery Time (trr) 205 ns
Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole
Base Product Number IKY75N120 RHoS yes
PBFree yes HalogenFree yes

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IKY75N120CS6XKSA1 Datasheet PDF

Preliminary Specification IKY75N120CS6XKSA1 PDF Download

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