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See Technical Specifications

MJ14003 +BOM

Power 60A 80V Discrete PNP

Manufacturer:

Onsemi
Mfr.Part #:

MJ14003
Datasheet:

MJ14003 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

PNP
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

80 V
EDA/CAD Models:

Request Free CAD Models for MJ14003

Email: [email protected]

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Tel: +852 95804164

MJ14003 General Description

Don't settle for subpar transistors when you can have the superior performance of the MJ14003. Designed with quality and precision in mind, this transistor exceeds expectations in power handling and reliability. Upgrade your electronics projects with the MJ14003 and experience the difference it can make in your designs

Key Features

High Current Capability - I_C Continuous = 60 Amperes
DC Current Gain - h_FE = 15-100 @ I_C = 50 Adc
Low Collector-Emitter Saturation Voltage - V_CE(sat) = 2.5 Vdc (Max) @ I_C = 50 Adc
Pb-Free Packages are Available

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	PNP	Configuration	Single
Collector- Emitter Voltage VCEO Max	80 V	Collector- Base Voltage VCBO	80 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	1 V
Maximum DC Collector Current	60 A	Pd - Power Dissipation	300 W
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
Continuous Collector Current	60 A	DC Collector/Base Gain hfe Min	30
Height	8.51 mm	Length	38.86 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	100
Subcategory	Transistors	Technology	Si
Width	26.67 mm	Unit Weight	0.056438 oz