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ATP301-TL-H +BOM

ATP301-TL-H P-channel MOSFET Transistor, 28 A, 100 V, 3-Pin ATPAK | ON Semiconductor ATP301-TL-H

Manufacturer:

Onsemi
Mfr.Part #:

ATP301-TL-H
Datasheet:

ATP301-TL-H Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

ATP301-TL-H General Description

The ATP301-TL-H MOSFET offers a unique combination of high current handling capability and low on-state resistance, making it an ideal choice for applications where efficiency is crucial. Its ATPAK package also makes it easy to integrate into existing circuit designs, saving time and hassle for engineers. With a drain source voltage of -100V and a power dissipation of 70W, this transistor can handle demanding tasks with ease

Key Features

ON-resistance RDS(on)=57m (typ.)

10V drive

Input capacitance Ciss=4000pF (typ.)

Halogen free compliance

Application

General-Purpose Switching Device Applications

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	28 A	Rds On - Drain-Source Resistance	75 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3.5 V
Qg - Gate Charge	73 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	70 W
Channel Mode	Enhancement	Series	ATP301
Configuration	Single	Fall Time	190 ns
Product Type	MOSFET	Rise Time	130 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	330 ns
Typical Turn-On Delay Time	32 ns	Unit Weight	0.139332 oz