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IDT10S60C

Schottky Diodes & Rectifiers 2ND GEN THINQ 600V SiC Schottky Diode

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IDT10S60C General Description

Diode 600 V 10A (DC) Through Hole PG-TO220-2-2

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Key Features

  • Revolutionary semiconductor material - Silicon Carbide
  • Switching behavior benchmark
  • No reverse recovery/ No forward recovery
  • No temperature influence on the switching behavior
  • High surge current capability
  • Pb-free lead plating; RoHs compliant
  • Qualified according to JEDEC1) for target applications
  • Breakdown voltage tested at 5mA2)
INFINEON Original Stock

Specifications

Category Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes Series thinQ!™
Technology SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 140 µA @ 600 V Capacitance @ Vr, F 480pF @ 1V, 1MHz
Mounting Type Through Hole Operating Temperature - Junction -55°C ~ 175°C

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Availability: 6433 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $10.446 $10.45
200+ $4.170 $834.00
500+ $4.030 $2,015.00
1000+ $3.961 $3,961.00

The prices below are for reference only.

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