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See Technical Specifications

GES6016 TIN/LEAD

Bipolar Transistors - BJT 70Vcbo 70Vces 60Vceo 5.0Vebo 625mW

Manufacturer:

Central Semiconductor
Mfr.Part #:

GES6016 TIN/LEAD
Datasheet:

GES6016 TIN/LEAD Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

60 V

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Avaq Semiconductor offers the highly versatile and reliable GES6016 TIN/LEAD driver, produced by Central Semiconductor. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the GES6016 TIN/LEAD.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	60 V	Collector- Base Voltage VCBO	70 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	500 mV
Maximum DC Collector Current	1.5 A	Pd - Power Dissipation	1 W
Gain Bandwidth Product fT	425 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Series	GES60
Continuous Collector Current	800 mA	DC Collector/Base Gain hfe Min	130 at 10 V, 1 mA
DC Current Gain hFE Max	500 at 1 V, 10 mA	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	2500	Subcategory	Transistors
Technology	Si