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2N5367

Bipolar (BJT) Transistor PNP 40 V 300 mA 250MHz 625 mW Through Hole TO-92

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2N5367 General Description

Bipolar (BJT) Transistor PNP 40 V 300 mA 250MHz 625 mW Through Hole TO-92

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 4 V Collector-Emitter Saturation Voltage 1 V
Pd - Power Dissipation 625 mW Gain Bandwidth Product fT 250 MHz
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Continuous Collector Current 300 mA DC Collector/Base Gain hfe Min 75 at 300 mA, 5 V
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 2500
Subcategory Transistors Technology Si
Unit Weight 0.007266 oz

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