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2N6123

Bipolar Transistors - BJT

2N6123 General Description

Bipolar (BJT) Transistor NPN 80 V 4 A 2.5MHz 40 W Through Hole TO-220-3

Key Features

  • Collector-base voltage(Vcbo = 80V)
  • Emitter-base voltage(Vebo = 5V)
  • Multicomp Pro products are rated 4.6 out of 5 stars
  • 12 month limited warranty *view Terms & Conditions for details
  • 96% of customers would recommend to a friend

Application

  • Industrial

Specifications

Product Category RF Transistors (BJT) Series 2N6123
Packaging Bulk 7 at 4 A 2 V
Part-Aliases Through Hole Unit-Weight + 150 C
Mounting-Style NPN Pd-Power-Dissipation 80 V
Maximum Operating Temperature 2.5 MHz

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Availability: 5415 PCS

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