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FF100R12RT4HOSA1

IGBT Module Trench Field Stop 2 Independent 1200 V 100 A 555 W Chassis Mount Module

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tel Tel: +852 95804164

FF100R12RT4HOSA1 General Description

IGBT Module Trench Field Stop 2 Independent 1200 V 100 A 555 W Chassis Mount Module

Infineon Technologies Corporation Inventory

Key Features

  • Extended operation temperature T
  • vj op
  • Low switching losses
  • Low V
  • CEsat
  • T
  • vj>
  • V
  • CEsat
  • Isolated base plate
  • Standard housing
  • Flexibility
  • Optimal electrical performance
  • Highest reliability
Infineon Technologies Corporation Original Stock

Application

  • Solutions for photovoltaic energy systems
  • Uninterruptible Power Supplies (UPS)

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules Series -
IGBT Type Trench Field Stop Configuration 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 100 A
Power - Max 555 W Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 100A
Current - Collector Cutoff (Max) 1 mA Input Capacitance (Cies) @ Vce 630 nF @ 25 V
Input Standard NTC Thermistor No
Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount
Base Product Number FF100R12 RHoS yes
PBFree yes HalogenFree no

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FF100R12RT4HOSA1 Datasheet PDF

Preliminary Specification FF100R12RT4HOSA1 PDF Download

FF100R12RT4HOSA1 PDF Preview

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