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EMZ8T2R

Bipolar Transistors - BJT DUAL PNP/NPN

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EMZ8T2R General Description

Bipolar (BJT) Transistor Array NPN, PNP 50V, 12V 150mA, 500mA 180MHz, 260MHz 150mW Surface Mount EMT6

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Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN, PNP Configuration Dual
Collector- Emitter Voltage VCEO Max 50 V, 12 V Collector- Base Voltage VCBO 60 V, 15 V
Emitter- Base Voltage VEBO 7 V, 6 V Collector-Emitter Saturation Voltage 400 mV, 250 mV
Maximum DC Collector Current 150 mA, 500 mA Pd - Power Dissipation 150 mW
Gain Bandwidth Product fT 260 MHz, 180 MHz Minimum Operating Temperature -
Maximum Operating Temperature + 150 C Series EMZ8
DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 120 at 1 mA, 6 V
Height 0.5 mm Length 1.6 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 8000
Subcategory Transistors Technology Si
Width 1.2 mm Part # Aliases EMZ8

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Availability: 7446 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $0.306 $0.31
200+ $0.122 $24.40
500+ $0.118 $59.00
1000+ $0.117 $117.00

The prices below are for reference only.

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