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SCT2080KE
SICFET N-CH 1200V 40A TO247
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Manufacturer:
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Mfr.Part #:
SCT2080KE
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Datasheet:
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Technology:
SiC
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Number of Channels:
1 Channel
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EDA/CAD Models:
Availability: 9939 PCS
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SCT2080KE General Description
Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
Key Features
- 1) Low on-resistance
- 2) Fast switching speed
- 3) Fast reverse recovery
- 4) Easy to parallel
- 5) Simple to drive
- 6) Pb-free lead plating ; RoHS compliant
Application
SWITCHINGSpecifications
Product Category | MOSFET | Technology | SiC |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1.2 kV |
Id - Continuous Drain Current | 40 A | Rds On - Drain-Source Resistance | 80 mOhms |
Vgs - Gate-Source Voltage | - 6 V, + 22 V | Vgs th - Gate-Source Threshold Voltage | 1.6 V |
Qg - Gate Charge | 106 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 262 W |
Channel Mode | Enhancement | Series | BM14270MUV-LB |
Configuration | Single | Fall Time | 22 ns |
Forward Transconductance - Min | 3.7 S | Product Type | MOSFET |
Rise Time | 36 ns | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 76 ns |
Typical Turn-On Delay Time | 35 ns | Part # Aliases | SCT2080KEC |
Unit Weight | 0.211644 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Availability: 9939 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
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