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See Technical Specifications

MRF300BN

RF MOSFET Transistors MRF300BN/SIL3///STANDARD MARKING * TUBE,MULTIPLE

Manufacturer:

NXP Semiconductor
Mfr.Part #:

MRF300BN
Datasheet:

MRF300BN Datasheet (PDF)
f<sub>i(RF)</sub> [max] (MHz):

250
Number of pins:

3
Amp Class:

AB
Test Signal:

Pulse
EDA/CAD Models:

Request Free CAD Models for MRF300BN

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

MRF300BN General Description

These devices, MRF300AN and MRF300BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.

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Key Features

Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation
Included in NXP product longevity program with assured supply for a minimum of 15 years after launch

Application

Industrial, scientific, medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– MRI and other medical applications
– Industrial heating, welding and drying systems
Radio and VHF TV broadcast
HF and VHF communications
Switch mode power supplies

Specifications

f<sub>i(RF)</sub> [max] (MHz)	250	Number of pins	3
Amp Class	AB	Test Signal	Pulse
Supply Voltage (Typ) (V)	50	Class	AB
Die Technology	LDMOS	Thermal Resistance (Spec) (℃/W)	0.55
P1dB (Typ) (dBm)	54.8	Security Status	COMPANY PUBLIC
Frequency (Min-Max) (MHz)	1.8,250	Efficiency (Typ) (%)	75.5
Frequency Band (Hz)	1800000,250000000	Description	RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
f<sub>i(RF)</sub> [min] (MHz)	1.8	P1dB (Typ) (W)	300
Gain (Typ) (dB)	20.4	Power Gain (Typ) (dB) @ f (MHz)	20.4 @ 230
Frequency (Max) (MHz)	250	Frequency (Min) (MHz)	1.8
Frequency (Min-Max) (GHz)	0.0018000001 to 0.25	f<sub>range</sub> [max] (MHz)	250
f<sub>range</sub> [min] (MHz)	1.8	Rth(j-a) (K/W)	0.55
Matching	unmatched	Modes of Operation	pulsed radio frequency signal