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BSC027N10NS5ATMA1

N-Channel 100 V 23A (Ta), 100A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TSON-8-3

email Email: [email protected]
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tel Tel: +852 95804164

BSC027N10NS5ATMA1 General Description

N-Channel 100 V 23A (Ta), 100A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TSON-8-3

BSC027N10NS5ATMA1

Specifications

Part Life Cycle Code Active Reach Compliance Code not_compliant
Avalanche Energy Rating (Eas) 641 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 194 A Drain-source On Resistance-Max 0.0027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 75 pF
JESD-30 Code R-PDSO-N8 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 3 W
Power Dissipation-Max (Abs) 214 W Pulsed Drain Current-Max (IDM) 776 A
Surface Mount YES Terminal Finish TIN
Terminal Form NO LEAD Terminal Position DUAL
Transistor Application SWITCHING Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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