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Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-220AB Tube
TO-220Manufacturer:
Mfr.Part #:
IRF3710PBF
Datasheet:
Series: IRF3710
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
100 V
EDA/CAD Models:
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The IRF3710PBF is a N-channel HEXFET power MOSFET from Infineon Technologies AG, designed for high-power applications. It features low on-resistance, enhanced 30V VDS rating, and high-speed switching capabilities. This device is suitable for use in DC-DC converters, motor control, and other applications that require efficient energy conversion. The IRF3710PBF has a TO-220 package and can handle up to 100V and 57A of current. Its low gate charge and high-speed switching make it an excellent choice for innovative supply designs, eco-friendly motor controls, intelligent battery systems, and more. This device is suitable for use in automotive and industrial applications where reliability, efficiency, and compact design are crucial.
The IRF3710PBF features:
The package type of IRF3710PBF is TO-220-3.
The IRF3710PBF has a TO-220 package with 3 pins:
This N-channel HEXFET power MOSFET is designed for high-power applications, offering low on-resistance and enhanced 30V VDS rating. It's suitable for use in DC-DC converters, motor control, and other applications that require high-speed switching capabilities and low gate charge.
The manufacturer of the IRF3710PBF is Infineon Technologies AG. Infineon is a German-based semiconductor solutions provider that focuses on providing microelectronics products for various industries, including automotive, industrial, and power electronics applications.
The application areas of the IRF3710PBF are:
The equivalent products of IRF3710PBF are:
These MOSFETs have similar specifications and applications as the IRF3710PBF.
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 57A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 23mOhm @ 28A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3130 pF @ 25 V | FET Feature | - |
Power Dissipation (Max) | 200W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Base Product Number | IRF3710 |
RHoS | yes | PBFree | yes |
HalogenFree | yes | Product Category | MOSFET |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 57 A | Rds On - Drain-Source Resistance | 23 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
Qg - Gate Charge | 86.7 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 200 W |
Channel Mode | Enhancement | Configuration | Single |
Height | 15.65 mm | Length | 10 mm |
Product Type | MOSFET | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Width | 4.4 mm | Unit Weight | 0.068784 oz |
Package/Case | TO-220 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.428 | $0.43 |
10+ | $0.362 | $3.62 |
50+ | $0.320 | $16.00 |
100+ | $0.283 | $28.30 |
500+ | $0.271 | $135.50 |
1000+ | $0.263 | $263.00 |
The prices above are for reference only.
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