Payment Method
IRF3710PBF
Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-220AB Tube
-
Manufacturer:
-
Mfr.Part #:
IRF3710PBF
-
Datasheet:
-
Series:
HEXFET®
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
100 V
-
EDA/CAD Models:
Availability: 6769 PCS
Please fill in the short form below and we will provide you the quotation immediately.
IRF3710PBF General Description
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Key Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard through-hole power package
- High-current rating
- Increased ruggedness
- Wide availability from distribution partners
- Industry standard qualification
- High performance in low frequency applications
- Standard pin-out allows for drop-in replacement
- High current capability
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | HEXFET® |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 23mOhm @ 28A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 3130 pF @ 25 V |
FET Feature | - | Power Dissipation (Max) | 200W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IRF3710 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
Product Category | MOSFET | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 57 A |
Rds On - Drain-Source Resistance | 23 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 86.7 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 200 W | Channel Mode | Enhancement |
Configuration | Single | Height | 15.65 mm |
Length | 10 mm | Product Type | MOSFET |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 4.4 mm |
Unit Weight | 0.068784 oz |
Service Policies and Others
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
IRF3710PBF Datasheet PDF
IRF3710PBF PDF Preview
Availability: 6769 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.586 | $0.59 |
10+ | $0.509 | $5.09 |
50+ | $0.405 | $20.25 |
100+ | $0.361 | $36.10 |
500+ | $0.346 | $173.00 |
1000+ | $0.339 | $339.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IRF3710PBF, guaranteed quotes back within 12hr.
I arrive sooner than expected, well packaged and in perfect condition.