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A1P25S12M3
ACEPACK 1 sixpack topology, 1200 V, 25 A, trench gate field-stop IGBT M series, soft diode and NTC
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Manufacturer:
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Mfr.Part #:
A1P25S12M3
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Datasheet:
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IGBT Type:
Trench Field Stop
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Configuration:
Three Phase Inverter
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Voltage - Collector Emitter Breakdown (Max):
1200 V
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Current - Collector (Ic) (Max):
25 A
Availability: 3831 PCS
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A1P25S12M3 General Description
This power module is a sixpack topology in an ACEPACK™ 1 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz.
Key Features
- ACEPACK™ 1 power module
- DBC Cu Al2O3 Cu
- Sixpack topology
- 1200 V, 25 A IGBTs and diodes
- Soft and fast recovery diode
- Integrated NTC
Specifications
Category | Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules | Series | - |
IGBT Type | Trench Field Stop | Configuration | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 25 A |
Power - Max | 197 W | Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 25A |
Current - Collector Cutoff (Max) | 100 µA | Input Capacitance (Cies) @ Vce | 1.55 nF @ 25 V |
Input | Standard | NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Base Product Number | A1P25 | Product Category | IGBT Modules |
Product | IGBT Silicon Modules | Collector- Emitter Voltage VCEO Max | 1.2 kV |
Collector-Emitter Saturation Voltage | 1.95 V | Continuous Collector Current at 25 C | 25 A |
Gate-Emitter Leakage Current | 500 nA | Pd - Power Dissipation | 197 W |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Maximum Gate Emitter Voltage | 20 V | Mounting Style | Through Hole |
Product Type | IGBT Modules | Factory Pack Quantity | 18 |
Subcategory | IGBTs | Technology | Si |
Tradename | ACEPACK | Unit Weight | 0.881849 oz |
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Availability: 3831 PCS
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