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MIXA225PF1200TSF

IGBT Module PT Half Bridge 1200 V 360 A 1100 W Chassis Mount Module

Manufacturer:

IXYS Corporation
Mfr.Part #:

MIXA225PF1200TSF
Datasheet:

MIXA225PF1200TSF Datasheet (PDF)
IGBT Type:

PT
Configuration:

Half Bridge
Voltage - Collector Emitter Breakdown (Max):

1200 V
Current - Collector (Ic) (Max):

360 A
EDA/CAD Models:

Request Free CAD Models for MIXA225PF1200TSF

Email: [email protected]

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MIXA225PF1200TSF General Description

Modules with built in rugged, short circuit rated XPT igbts and fast switching SONIC free wheeling diodes for high commutation robustness in phase leg configuration designed for motor drive inverter.

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules	Series	-
IGBT Type	PT	Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V	Current - Collector (Ic) (Max)	360 A
Power - Max	1100 W	Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 225A
Current - Collector Cutoff (Max)	300 µA	Input	Standard
NTC Thermistor	Yes	Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount	Base Product Number	MIXA225
Product Category:	IGBT Modules	Configuration:	Dual
Collector- Emitter Voltage VCEO Max:	1.2 kV	Collector-Emitter Saturation Voltage:	1.8 V
Continuous Collector Current at 25 C:	360 A	Gate-Emitter Leakage Current:	1.5 uA
Minimum Operating Temperature:	- 40 C	Maximum Operating Temperature:	+ 150 C
Packaging:	Bulk	Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Chassis Mount	Product Type:	IGBT Modules
Series:	MIXA225PF1200	Factory Pack Quantity:	3
Subcategory:	IGBTs	Tradename:	XPT