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IXFH44N50P

In Stock: 6,143

N-channel 500V 44A power MOSFET in TO-247AD package

Manufacturers:
Littelfuse Inc
Mfr.Part#:
IXFH44N50P
Package/Case:
TO-247-3
Product Type:
Single FETs, MOSFETs
RoHS:
EDA/CAD Models:
Request Free CAD Models for IXFH44N50P

IXFH44N50P Information

Description

The IXFH44N50P is an N-Channel Power Transistor from Littelfuse/IXYS. It's a through-hole package, specifically designed for high-performance power applications. This transistor has a high current density of 44A (Tc) and can withstand up to 658W (Tc). It offers features such as high surge current capability, low leakage current, ultra-fast response time, improved thermal performance, and fault-tolerant operation, making it suitable for various applications, including solar panels, wind turbines, energy storage systems, electric vehicles, industrial machinery, medical devices, laptops, tablets, smartphones, cameras, electronic gadgets, architectural lighting, high and low power LEDs, and more.

Features

According to the product information, the features of IXFH44N50P are:

High Surge Current Capability
Low Leakage Current
Ultra Fast Response Time
Improved Thermal Performance
Robust Construction
Wide Voltage Operating Range

These features make it suitable for various applications such as outdoor and indoor lighting, laptops and tablets, solar panels and inverters, medical devices, electric vehicles, and industrial machinery.

Package

The package type of IXFH44N50P is Transistor Outline, Vertical - TO-247 (IXFH) Outline_2021.

Pinout

According to the provided information, the package type is Transistor Outline, Vertical - TO-247 (IXFH) Outline_2021. The detailed pinout for this package can be found in the Transistor Outline 247 standard.

The typical function of a TO-247 package is an N-Channel Power Mosfet. In conclusion:

Pin Count: 3 Pins
Function: N-Channel Power Mosfett with functions such as high current handling, low input capacitance, and fast switching.

Manufacturer

The manufacturer of the IXFH44N50P is Littelfuse/IXYS.

Applications

According to the provided information, IXFH44N50P can be applied in various areas, including:

Outdoor and Indoor Lighting
High and Low Power LEDs
Architectural Lighting

Additionally, it is also suitable for use in:

Laptops and Tablets
Smartphones and Cameras
Electronic Gadgets
Solar Panels and Inverters
Wind Turbines and Generators
Energy Storage Systems
Medical Devices and Equipment
Electric Vehicles and Charging Stations
Hybrid Cars and E-Bikes
Industrial Machinery and Equipment
Robotics and Automation
Sensors and Controls

Specifications

Drain-Source Voltage (V)	500	Maximum On-Resistance @ 25 ℃ (Ohm)	0.14
Continuous Drain Current @ 25 ℃ (A)	44	Gate Charge (nC)	98
Input Capacitance, CISS (pF)	5440	Thermal resistance [junction-case] (K/W)	0.19
Configuration	Single	Power Dissipation (W)	658
Maximum Reverse Recovery (ns)	200	Sample Request	Yes
Check Stock	Yes	Package/Case	TO-247-3

IXFH44N50P FAQs

1.Q: Are there related parts in the IXF... HiPerFET family?

A: The HiPerFET family includes variants with similar voltage/current ratings and enhanced switching characteristics. Consult Littelfuse/IXYS datasheets for specific alternatives.

2.Q: What are the recommended operating conditions for the IXF... HiPerFET?

A: It operates at up to 150°C junction temperature, with a minimum drain-source breakdown voltage of 500 V and enhancement-mode switching.

3.Q: Does the IXF... HiPerFET include a built-in diode?

A: Yes, it features a single MOSFET configuration with an integrated fast-recovery body diode for improved switching performance.

4.Q: What is the typical RDS(on) of the IXF... HiPerFET at full load?

A: The maximum drain-source on-resistance (RDS(on)) is 0.14 Ω, enabling low conduction losses during operation.

5.Q: What is the avalanche energy rating (Eas) of the IXF... HiPerFET?

A: The avalanche energy rating (Eas) is 1700 mJ, ensuring robustness in high-voltage transient conditions.

6.Q: What certifications or standards does the IXF... HiPerFET comply with?

A: The device is RoHS-compliant, adheres to JEDEC TO-247AD standards, and meets REACH and ECCN EAR99 requirements.

7.Q: What package does the IXF... HiPerFET use?

A: It is packaged in a TO-247AD (TO-247) outline with a flange-mount design (R-PSFM-T3) and matte tin-plated terminals.

8.Q: What is the maximum drain current (ID) for the IXF... HiPerFET?

A: The maximum continuous drain current (ID) is 44 A, with a pulsed drain current (IDM) rating of 110 A.

9.Q: What applications is the IXF... HiPerFET designed for?

A: It is optimized for phase-shift bridge motor control, uninterruptible power supplies (UPS), and other high-power switching applications requiring fast diode recovery and low conduction losses.

10.Q: What are the key features of the Littelfuse/IXYS IXF... HiPerFET?

A: The IXF... HiPerFET offers the lowest RDS(on) (0.14 Ω), low thermal resistance (RthJC), reduced reverse recovery time (trr) for the body diode, high avalanche energy rating (1700 mJ), and enhanced DV/DT capability, making it ideal for high-efficiency switching.

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$5.233

$52.33

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$5.092

$152.76

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$4.459

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