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K9G8G08U0M-PCB0
Flash, 1GX8, 20ns, PDSO48
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Manufacturer: SAMSUNG
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Mfr.Part #: K9G8G08U0M-PCB0
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Datasheet: K9G8G08U0M-PCB0 Datasheet (PDF)
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Package/Case: TSOP48
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Availability: 4240 PCS
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K9G8G08U0M-PCB0 General Description
DescriptionOffered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9G8G08U0M′s extended reliability of 5K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9G8G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. Features•Voltage Supply- 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V- 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V•Organization- Memory Cell Array : (512M + 16M) x 8bit- Data Register : (2K + 64) x 8bit•Automatic Program and Erase- Page Program : (2K + 64)Byte- Block Erase : (256K + 8K)Byte•Page Read Operation- Page Size : (2K + 64)Byte- Random Read : 60µs(Max.)- Serial Access : 30ns(Min.)•Memory Cell : 2bit / Memory Cell512M x 8 Bit / 1G x 8 Bit NAND Flash Memory•Fast Write Cycle Time- Program time : 800µs(Typ.)- Block Erase Time : 1.5ms(Typ.)•Command/Address/Data Multiplexed I/O Port•Hardware Data Protection- Program/Erase Lockout During Power Transitions•Reliable CMOS Floating-Gate Technology- Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC)- Data Retention : 10 Years•Command Register Operation•Unique ID for Copyright Protection•Package :- K9G4G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE48 - Pin TSOP1(12 x 20 / 0.5 mm pitch)- K9G4G08U0A-ICB0/IIB052 - Pin ULGA (12 x 17 / 1.00 mm pitch)- K9L8G08U1A-ICB0/IIB052 - Pin ULGA (12 x 17 / 1.00 mm pitch)- K9G4G08B0A : MCP(TBD)
Key Features
- 1. Memory capacity: 8 Gigabit (1 Gigabyte)
- 2. Organization: 1024 Mbytes x 8 banks x 1 page (8,192 pages)
- 3. Voltage supply: 2.7V - 3.6V
- 4. Interface: Asynchronous, Toggle DDR
- 5. Package: VFBGA (Very Fine Pitch Ball Grid Array)
Application
- 1. Solid-state drives (SSDs)
- 2. Mobile devices (smartphones, tablets)
- 3. Digital cameras
- 4. Gaming consoles
- 5. Industrial control systems
Specifications
Product Category | IC Chips |
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Availability: 4240 PCS
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