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STPSC20H065CW

650 V, 20 A dual High Surge Silicon Carbide Power Schottky Diode

Manufacturer:

STMicroelectronics
Mfr.Part #:

STPSC20H065CW
Datasheet:

STPSC20H065CW Datasheet (PDF)
Diode Configuration:

1 Pair Common Cathode
Technology:

SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):

650 V
Current - Average Rectified (Io) (per Diode):

10A
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STPSC20H065CW General Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Key Features

No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability

Specifications

Diode Configuration	1 Pair Common Cathode	Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V	Current - Average Rectified (Io) (per Diode)	10A
Voltage - Forward (Vf) (Max) @ If	1.75 V @ 10 A	Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns	Current - Reverse Leakage @ Vr	100 µA @ 650 V
Operating Temperature - Junction	-40°C ~ 175°C	Mounting Type	Through Hole
Base Product Number	STPSC20