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IXTP96P085T

MOSFET -96 Amps -85V 0.013 Rds

Manufacturer:

IXYS
Mfr.Part #:

IXTP96P085T
Datasheet:

IXTP96P085T Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED
EDA/CAD Models:

Request Free CAD Models for IXTP96P085T

Email: [email protected]

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Tel: +852 95804164

IXTP96P085T General Description

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.

Key Features

Fast intrinsic diode
Low Q
g
and RDS
on
Avalanche rated
Extended FBSOA
International standard packages
Advantages:
Low gate charge resulting in simple drive requirement
High power density
Fast switching

Application

High-side switching
Load switches
Low voltage applications
High-efficiency switching power supplies
Inverters and battery chargers

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	1000 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	85 V
Drain Current-Max (ID)	96 A	Drain-source On Resistance-Max	0.013 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	460 pF
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	298 W	Pulsed Drain Current-Max (IDM)	300 A
Surface Mount	NO	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON